IGP15N60T_技术文档_晶体_晶体管_功率控制_双极性晶体管_栅_局域...

来自 : www.icpdf.com/INFINEON_datashe 发布时间：2021-03-25

TrenchStop®SeriesIGP15N60TqLow Loss IGBT in TrenchStop®and Fieldstop technology•••••Very lowVCE(sat)1.5 V (typ.)Maximum Junction Temperature 175 °CShort circuit withstand time – 5µsDesigned for :- Frequency Converters- Uninterrupted Power Supply®TrenchStop and Fieldstop technology for 600 V applicationsoffers :- very tight parameter distribution- high ruggedness, temperature stable behavior- very high switching speedPositive temperature coefficient inVCE(sat)Low EMIPb-free lead plating; RoHS compliant1Qualified according to JEDEC for target applicationsComplete product spectrum and PSpice Models :http://www.infineon.com/igbt/VCE600VIC15AVCE(sat),Tj=25°C1.5VTj,max175°CMarking CodeG15T60PackagePG-TO-220-3-1CGEPG-TO-220-3-1•••••TypeIGP15N60TMaximum RatingsParameterCollector-emitter voltageDC collector current, limited byTjmaxTC= 25°CTC= 100°CPulsed collector current,tplimited byTjmaxTurn off safe operating area (VCE≤600V,Tj≤175°C)Gate-emitter voltageShort circuit withstand time2)SymbolVCEICValue6003015UnitVAICpul s-VGEtSCPtotTjTstg4545±205130-40...+175-55...+175260VµsW°CVGE= 15V,VCC≤400V,Tj≤150°CPower dissipationTC= 25°COperating junction temperatureStorage temperatureSoldering temperaturewavesoldering, 1.6 mm (0.063 in.) from case for 10s12)J-STD-020 and JESD-022Allowed number of short circuits: 1000; time between short circuits: 1s.1Rev. 2.2 Sep. 07Power SemiconductorsTrenchStop®SeriesThermal ResistanceParameterCharacteristicIGBT thermal resistance,junction – caseThermal resistance,junction – ambientRthJCRthJASymbolConditionsIGP15N60TqMax. Value1.1562UnitK/WElectrical Characteristic,atTj= 25°C,unless otherwise specifiedParameterStatic CharacteristicCollector-emitter breakdown voltageCollector-emitter saturation voltageV( B R ) C E SVG E= 0V ,IC= 0 .2m AVCE(sat)VG E= 15 V ,IC= 15 ATj=2 5°CTj=1 7 5° CGate-emitter threshold voltageZero gate voltage collector currentVGE(th)ICESIC= 21 0µ A ,VC E=VG EVC E= 60 0 V,VG E= 0VTj=2 5°CTj=1 7 5° CGate-emitter leakage currentTransconductanceIntegrated gate resistorDynamic CharacteristicInput capacitanceOutput capacitanceReverse transfer capacitanceGate chargeInternal emitter inductancemeasured 5mm (0.197 in.) from caseShort circuit collector current1)SymbolConditionsValuemin.600--4.1Typ.-1.51.94.9max.-2.05-5.7UnitVµA-------8.7-401000100-nASΩIGESgfsRGintVC E= 0V ,VG E=2 0 VVC E= 20 V ,IC= 15 ACissCossCrssQGateLEIC(SC)VC E= 25 V ,VG E= 0V ,f=1 MH zVC C= 48 0 V,IC=1 5 AVG E= 15 V-----8605524877137.5------pFnCnHAVG E= 15 V ,tS C≤5µsVC C= 4 0 0 V,Tj= 15 0°C-1)Allowed number of short circuits: 1000; time between short circuits: 1s.2Rev. 2.2 Sep. 07Power SemiconductorsTrenchStop®SeriesSwitching Characteristic, Inductive Load,atTj=25°CParameterIGBT CharacteristicTurn-on delay timeRise timeTurn-off delay timeFall timeTurn-on energyTurn-off energyTotal switching energytd(on)trtd(off)tfEonEoffEtsTj=2 5°C,VC C= 40 0 V,IC= 1 5 A,VG E= 0 /1 5 V,RG= 15Ω,1)Lσ=1 5 4n H,1)Cσ= 3 9p FEnergy losses include“tail” and diodereverse recovery.-------SymbolConditionsIGP15N60TqValuemin.Typ.1711188500.220.350.57max.-------mJUnitnsSwitching Characteristic, Inductive Load,atTj=175°CParameterIGBT CharacteristicTurn-on delay timeRise timeTurn-off delay timeFall timeTurn-on energyTurn-off energyTotal switching energytd(on)trtd(off)tfEonEoffEtsTj=1 7 5° C,VC C= 40 0 V,IC= 1 5 A,VG E= 0/ 15 V ,RG= 15Ω1)Lσ=1 5 4n H,1)Cσ= 3 9p FEnergy losses include“tail” and diodereverse recovery.-------1715212790.340.470.81-------mJnsSymbolConditionsValuemin.Typ.max.Unit1)Leakage inductanceLσa nd Stray capacityCσdue to dynamic test circuit in Figure E.3Rev. 2.2 Sep. 07Power SemiconductorsTrenchStop®SeriesIGP15N60Tqtp=2µs40A10µsIC,COLLECTOR CURRENT30ATC=110°CIC,COLLECTOR CURRENTTC=80°C10A50µs20A1A1msDC10msIc10AIc0A10H z100H z1kHz10kHz100kHz0.1A1V10V100V1000Vf,SWITCHING FREQUENCYFigure 1. Collector current as a function ofswitching frequency(Tj≤175°C,D =0.5,VCE= 400V,VGE= 0/+15V,RG= 15Ω)VCE,COLLECTOR-EMITTER VOLTAGEFigure 2. Safe operating area(D=0,TC= 25°C,Tj≤175°C;VGE=15V)30A120W100W80W60W40W20W0W25°CIC,COLLECTOR CURRENTPtot,POWER DISSIPATION20A10A50°C75°C100°C 125°C 150°C0A25°C75°C125°CTC,CASE TEMPERATUREFigure 3. Power dissipation as a function ofcase temperature(Tj≤175°C)TC,CASE TEMPERATUREFigure 4. Collector current as a function ofcase temperature(VGE≥15V,Tj≤175°C)Power Semiconductors4Rev. 2.2 Sep. 07TrenchStop®Series40A40A35AVGE=20V35AVGE=20V15V13V11V20A15A10A5A0A0V1V2V3V0V1V9V7VIGP15N60TqIC,COLLECTOR CURRENTIC,COLLECTOR CURRENT30A25A20A15A10A5A0A15V13V11V9V7V30A25A2V3VVCE,COLLECTOR-EMITTER VOLTAGEFigure 5. Typical output characteristic(Tj= 25°C)VCE,COLLECTOR-EMITTER VOLTAGEFigure 6. Typical output characteristic(Tj= 175°C)35A30A25A20A15A10ATJ= 1 7 5 °C5A0A2 5 °CVCE(sat),COLLECTOR-EMITT SATURATION VOLTAGE2.5VIC=30AIC,COLLECTOR CURRENT2.0V1.5VIC=15AIC=7.5A1.0V0.5V0.0V0V2V4V6V8V0°C50°C100°C150°CVGE,GATE-EMITTER VOLTAGEFigure 7. Typical transfer characteristic(VCE=20V)TJ,JUNCTION TEMPERATUREFigure 8. Typical collector-emittersaturation voltage as a function ofjunction temperature(VGE= 15V)Power Semiconductors5Rev. 2.2 Sep. 07